Specification
THN6601B
□ Thermal Characteristics
Symbol
Rth j-s
Parameter
Condition
Value
55
Unit
K/W
Thermal resistance from junction
to soldering point
Ptot = 1.5 W; TS = 60 ℃; note 1
Note 1. TS is the temperature at the soldering point of the collector pin.
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Symbol
ICBO
ICEO
IEBO
hFE
Test Conditions
VCB = 19 V, IE = 0 mA
VCE = 12 V, IB = 0 mA
VEB = 1.5 V, IC = 0 mA
VCE = 5 V, IC = 100 mA
Min.
Typ.
Max.
0.5
Unit
Collector Cut-off Current
㎂
㎂
㎂
10
Emitter Cut-off Current
DC Current Gain
0.5
50
4
300
Gain Bandwidth Product
fT
VCE = 5 V, IC = 100 mA
6
7.0
11
12
7
GHz
GHz
dB
VCE = 7 V, IC = 100 mA
5
Maximum Available Gain
Insertion Power Gain
MAG
|S21|2
Cre
VCE = 5 V, IC = 100 mA, f = 1 GHz
VCE = 7 V, IC = 100 mA, f = 1 GHz
8
9
dB
VCE = 5 V, IC = 100 mA, f = 1 GHz
5
dB
VCE = 7 V, IC = 100 mA, f = 1 GHz
VCB = 6 V, IE = 0 mA, f = 1 MHz
5
7
dB
Reverse Transfer Capacitance
1.9
pF
□ hFE Classification
Marking
R1601
R1601·
hFE Value
50 - 200
170 - 300
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Page 2 of 7
TI [ TEXAS INSTRUMENTS ]
