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THN6301 参数 Datasheet PDF下载

THN6301图片预览
型号: THN6301
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 207 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THN6301 Series  
Electrical Characteristics ( TA = 25 )  
Value  
Symbol  
Parameter  
Test Condition  
CB = 19 V, IE = 0 mA  
VCE = 12 V, IB = 0 mA  
EB = 1 V, IC = 0 mA  
VCE = 8 V, IC = 15 mA  
Unit  
Min.  
Typ. Max.  
ICBO  
ICEO  
IEBO  
hFE  
fT  
V
-
-
-
-
0.5  
5
uA  
uA  
uA  
Collector Cut-off Current  
V
Emitter Cut-off Current  
DC Current Gain  
-
-
0.5  
300  
-
80  
-
150  
10  
0.55  
V
CE = 8 V, IC = 15 mA  
CB = 10 V, f = 1 MHz  
Transition Frequency  
Collector to Base Capacitance  
GHz  
pF  
CCB  
V
-
-
VCE = 8 V, IC = 7 mA, f = 1 GHz  
VCE = 8 V, IC = 15 mA, f = 1 GHz  
VCE = 8 V, IC = 7 mA, f = 1 GHz  
VCE = 8 V, IC = 15 mA, f = 1 GHz  
VCE = 8 V, IC = 5 mA, f = 1 GHz  
VCE = 8 V, IC = 5 mA, f = 1 GHz  
VCE = 8 V, IC = 5 mA, f = 1 GHz  
VCE = 8 V, IC = 15 mA, f = 1 GHz  
VCE = 8 V, IC = 15 mA, f = 1 GHz  
10  
12  
15  
16  
-
12.5  
14.5  
16.5  
18  
-
-
-
-
-
-
-
-
-
|S21|2  
Insertion Power Gain  
dB  
dB  
MAG Maximum Available Gain  
NFmin Minimum Noise Figure  
1.1  
dB  
rn  
Noise Resistance  
-
0.09  
14.5  
15.5  
27  
-
GA  
Associated Gain  
dB  
-
OIP3  
Output 3rd Order Intercept  
-
dBm  
Aug.-2005  
Rev 2.0  
www.tachyonics.co.kr  
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