Si3220/Si3225
Table 4. 5 V Power Supply Characteristics1 (Continued)
(VDD, VDD1–VDD4 = 5 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
Supply Current
I
Sleep mode, RESET = 0,
—
100
—
µA
BAT
VBAT
(Si3200)
V
= –70 V
BAT
Open (high-impedance), V
= –70 V
= –70 V
—
—
225
400
—
—
µA
µA
BAT
Active on-hook standby, V
BAT
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –24 V
—
4.4 +
LIM
—
mA
BAT
I
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
8.4
6
—
—
mA
mA
BAT
Ringing, V
= 45 V
,
RING
rms
V
= –70 V,
BAT
2
1 REN load
Chipset Power
Consumption
P
Sleep mode, RESET = 0,
= –70 V
—
12
—
mW
SLEEP
V
BAT
P
Open (high-impedance), V
= –70 V
= –48 V
= –70 V
—
—
—
115
120
130
—
—
—
mW
mW
mW
OPEN
BAT
BAT
BAT
P
P
Active on-hook standby, V
Active on-hook standby, V
STBY
STBY
3
3
P
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –24 V
ACTIVE
—
—
—
385
490
700
—
—
—
mW
mW
mW
BAT
P
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –48 V
ACTIVE
BAT
P
P
Forward/reverse OHT, OBIAS = 4 mA,
= –48 V
OHT
OHT
RING
V
BAT
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
890
585
—
—
mW
mW
BAT
P
Ringing, V
BAT
= 45 V
,
RING
rms
2
V
= –70 V, 1 REN load
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILOOP term.
Rev. 1.0
9
SILICONIMAGE [ Silicon image ]
