Si3220/Si3225
Table 3. 3.3 V Power Supply Characteristics1 (Continued)
(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Supply Cur-
Symbol
Test Condition
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
Forward/reverse active off-hook,
Min
—
Typ
110
110
110
Max
—
Unit
µA
V
I
VDD
DD
rent (Si3200)
—
—
µA
—
—
µA
ABIAS = 4 mA, V
= –24 V
—
110
—
µA
BAT
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
110
110
—
—
µA
µA
BAT
Ringing, V
= 45 V
,
RING
rms
V
= –70 V,
BAT
Sine Wave, 1 REN load
V
Supply Cur-
I
Sleep mode, RESET=0,
—
—
—
—
100
225
400
—
—
—
—
µA
µA
µA
mA
BAT
VBAT
rent (Si3200)
V
= –70 V
BAT
Open (high-impedance),
= –70 V
V
BAT
Active on-hook standby,
= –70 V
V
BAT
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –24 V
4.4 + I
LIM
BAT
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
8.4
6
—
—
mA
mA
BAT
Ringing, V
= 45 V
,
RING
rms
V
= –70 V,
BAT
2
Sine Wave, 1 REN load
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILOOP term.
6
Rev. 1.0
SILICONIMAGE [ Silicon image ]
