Si3220/Si3225
Table 2. Recommended Operating Conditions
Parameter
Symbol
Test
Min*
Typ
Max*
Unit
Condition
o
Ambient Temperature
T
K/F-Grade
B/G-Grade
0
25
25
70
85
C
A
o
Ambient Temperature
T
–40
3.13
3.13
–15
–15
C
A
Supply Voltage, Si3220/Si3225
V
–V
3.3/5.0
3.3/5.0
—
5.25
5.25
–99
V
V
V
V
DD1
DD4
Supply Voltage, Si3200
High Battery Supply Voltage, Si3200
V
DD
VBATH
VBATL
Low Battery Supply Voltage, Si3200
—
V
BATH
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 oC unless otherwise stated.
Table 3. 3.3 V Power Supply Characteristics1
(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
–V
Symbol
I –I
VDD1 VDD4
Test Condition
Min
—
Typ
1
Max
—
Unit
mA
mA
mA
V
Sup-
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
DD1
DD4
ply
—
15
15
—
Current (Si3220/
Si3225)
—
—
Forward/reverse active off-hook,
ABIAS = 4 mA
—
22 + I
—
mA
LIM
Forward/reverse active OHT
OBIAS = 4 mA, V
= –24 V
—
—
44
28
—
—
mA
mA
BAT
Ringing, V
= 45 V , V
= –70 V,
BAT
RING
rms
2
Sine Wave, 1 REN load
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILOOP term.
Rev. 1.0
5
SILICONIMAGE [ Silicon image ]
