Si3220/Si3225
Table 3. 3.3 V Power Supply Characteristics1 (Continued)
(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Chipset Power
Consumption
P
Sleep mode, RESET = 0,
—
8
—
mW
SLEEP
V
= –70 V
BAT
P
Open (high-impedance), V
= –70 V
= –48 V
= –70 V
—
—
—
65
70
80
—
—
—
mW
mW
mW
OPEN
BAT
BAT
BAT
P
P
Active on-hook standby, V
Active on-hook standby, V
STBY
STBY
3
3
P
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –24 V
ACTIVE
—
—
—
240
345
550
—
—
—
mW
mW
mW
BAT
P
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –48 V
ACTIVE
BAT
P
P
Forward/reverse OHT, OBIAS = 4 mA,
= –48 V
OHT
OHT
RING
V
BAT
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
735
516
—
—
mW
mW
BAT
P
Ringing, V
BAT
= 45 v
,
RING
rms
2
V
= –70 V, 1 REN load
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILOOP term.
Rev. 1.0
7