S TM6960
10
8
1200
V
I
DS =48V
=4.5A
1000
800
D
C iss
6
600
4
400
200
2
0
6
C oss
C rss
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12 14 16
Qg, T otal G ate C harge (nC )
VDS , Drain-to S ource Voltage (V)
F igure 10. G ate C harge
Figure 9. C apacitance
50
600
30
10
t
i
m
i
L
)
N
1
0
O
(
m
s
R DS
100
60
1
Tr
0
0
m
s
Tf
1
s
1
10
D
C
0.1
V
G S =10V
S ingle P ulse
=25 C
V DS =30V ,ID=4.5A
V G S =10V
1
T
A
0.03
600
1
6
10
60 100 300
0.1
1
10
60
V
DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 12. Maximum S afe
Operating Area
F igure 11.switching characteristics
9
1
0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
on
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
