S TM6960
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
15
12
9
15
VG S =4.5V
-55 C
25 C
12
9
VG S =10V
VG S =4V
VG S =3.5V
6
6
3
3
Tj=125 C
VG S =3V
2.5
0
0.0
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1.0
1.5
2.0
3.0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
90
2.0
1.8
1.6
1.4
1.2
1.0
0
75
60
VG S =4.5V
VG S =10V
V
I
G S =10V
=4.5A
D
45
30
V
G S =4.5V
=3A
I
D
15
1
1
3
6
9
12
15
0
150
25
50
75
100
125
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
