STM6960
ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
C
Typ
Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
VGS
0V, ID
250uA
Drain-Source Breakdown Voltage
60
V
BVDSS
uA
nA
I
DSS
GSS
V
DS
GS
48V, VGS 0V
20V, VDS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
V
I
100
b
ON CHARACTERISTICS
1.0
20
1.8
V
GS(th)
3.0
60
75
V
Gate Threshold Voltage
V
DS
V
GS, I
D
= 250uA
m ohm
m ohm
47
55
V
V
V
V
GS 10V, I
D
4.5A
3A
Drain-Source On-State Resistance
R
DS(ON)
GS 4.5V, I
D
DS = 5V, VGS = 10V
DS 5V, I 4.5A
On-State Drain Current
ID(ON)
A
S
gFS
12
Forward Transconductance
D
c
DYNAMIC CHARACTERISTICS
Input Capacitance
700
80
50
5
P
F
C
ISS
V
DS =25V, VGS = 0V
P
F
F
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
COSS
f =1.0MH
Z
CRSS
P
Rg
V
GS =0V, VDS = 0V, f=1.0MH
Z
ohm
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
ns
ns
ns
13
10
28
7
V
DD = 30V
= 4.5 A
t
Rise Time
ID
tD(OFF)
V
R
GS = 10V
GEN = 3 ohm
Turn-Off Delay Time
Fall Time
t
ns
Total Gate Charge
V
DS =48V, I
D
=4.5A,VGS =10V
=4.5A,VGS =4.5V
nC
nC
Qg
15
7.5
V
DS =48V, I
D
nC
nC
Q
gs
Gate-Source Charge
Gate-Drain Charge
1.6
4.3
V
V
DS =48V, I
GS =10V
D
= 4.5 A
Q
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
