S TM6960
1.15
1.10
1.3
ID=250uA
V
DS =V G S
1.2
I
D=250uA
1.1
1.0
0.9
1.05
1.00
0.95
0.90
0.85
0.8
0.7
0.6
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
180
20.0
ID=4.5A
150
120
25 C
10.0
125 C
25 C
5.0
90
60
75 C
75 C
30
0
125 C
1.0
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
VG S , G ate-S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
