01/99
B-51
J111, J112, J113
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 35 V
50 mA
360 mW
3.27 mW/°C
J111
J112
J113
Process NJ132
Test Conditions
At 25°C free air temperature
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 35
– 35
– 35
2
V
nA
V
I = – 1µA, V = ØV
G DS
(BR)GSS
I
– 1
– 1
– 5
– 1
– 3
V
= – 15V, V = ØV
GSS
GS DS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
V
– 3
20
– 10 – 1
V
= 5V, I = 1 µA
GS(OFF)
DS D
I
5
mA
nA
V
= 15V, V = ØV
DSS
DS GS
I
– 1
– 1
– 1
V
= 15V, V = – 10V
D(OFF)
DS GS
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
r
30
5
50
5
100
5
Ω
V
= ØV, V = 0.1V
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
ds(on)
GS DS
C
pF
pF
pF
V
= ØV, V = – 10V
dg
DS GS
Source Gate Capacitance
C
5
5
5
V
= ØV, V = – 10V
gs
DS GS
Drain Gate + Source Gate Capacitance
C
+ C
28
28
28
V = V = ØV
DS GS
gd
gs
Switching Characteristics
Turn ON Delay Time
Rise Time
Typ
7
Typ
7
Typ
7
t
t
t
t
ns
ns
ns
ns
J111
10
J112
10
J113
d(on)
6
6
2
V
10
– 5
V
r
DD
Turn OFF Delay Time
Fall Time
20
15
20
15
20
15
V
– 12
800
– 7
V
d(off)
f
GS(OFF)
R
1600
3200
Ω
L
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ111, SMPJ112, SMPJ113
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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