B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
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¥ Analog Switches
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 25 V
50 mA
360 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
J110
J110A
Process NJ450
Test Conditions
I = – 1 µA, V = ØV
Min Max Min Max Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 25
– 25
V
nA
V
(BR)GSS
G
DS
I
– 3
– 0.5 – 4 – 0.5 – 4
10 10
– 3
V
= – 15V, V = ØV
GSS
GS
DS
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
V
V
= 5V, I = 1 µA
GS(OFF)
DS
D
I
mA
nA
V
= 15V, V = ØV
DSS
DS
GS
I
3
3
V
= 5V, V = – 10V
D(OFF)
DS
GS
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
r
18
15
15
85
25
15
15
85
Ω
V
= Ø, V < = 0.1V
f = 1 kHz
ds(on)
GS
DS
C
pF
pF
pF
V
= ØV, V = – 10V
f = 1 MHz
f = 1 MHz
f = 1 MHz
gd
DS
GS
Source Gate Capacitance
C
V
= ØV, V = – 10V
gs
DS
GS
Drain Gate + Source Gate Capacitance
C
+ C
V
= V = ØV
gd
gs
DS
GS
Switching Characteristics
Typ
Typ
Turn ON Delay Time
Rise Time
td
4
1
4
1
ns
ns
ns
ns
J110
J110A
(on)
t
V
1.5
– 5
1.5
– 5
V
V
r
DD
V
R
Turn OFF Delay Time
Fall Time
td
6
6
GS(OFF)
(off)
150
150
Ω
L
t
30
30
f
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ110, SMPJ110A
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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