01/99
B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Analog Low On Resistance
Switches
¥ Choppers
A
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
100 mA
300 mW
2.4 mW/°C
IFN5432
IFN5433
IFN5434
Process NJ903
Test Conditions
At 25°C free air temperature:
Static Electrical Characteristics
Min Max Min Max Min Max Unit
Gate Source Breakdown Voltage
V
– 25
– 25
– 25
V
– 200 pA
– 200 nA
I = – 1µA, V = ØV
G DS
(BR)GSS
– 200
– 200
– 200
– 200
– 9
V
= – 15V, V = ØV
DS
GS
Gate Reverse Current
I
GSS
V
= – 15V, V = ØV
DS
T = 150°C
A
GS
Gate Source Cutoff Voltage
V
– 4
– 10 – 3
– 1
30
– 4
V
mA
pA
nA
mV
Ω
V = 5V, I = 3 nA
DS G
GS(OFF)
Drain Saturation Current (Pulsed)
I
150
100
V
= 15V, V = ØV
DSS
DS GS
200
200
50
200
200
70
200
200
100
10
V
= 5V, V = – 10V
GS
DS
I
Drain Cutoff Current
D(OFF)
V
= 5V, V = – 10V
GS
T = 150°C
A
DS
Drain Source ON Voltage
V
V = ØV, I = 10 mA
GS D
DS
Static Drain Source ON Resistance
r
2
5
7
V
= ØV, I = 10 mA
DS(ON)
DS D
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
5
7
10
60
Ω
V
= ØV, I = ØA
D
f = 1 kHz
f = 1 MHz
ds(on)
GS
Common Source Input Capacitance
C
60
60
pF
V
= ØV, V = – 10V
iss
DS GS
Common Source Reverse
Transfer Capacitance
C
20
20
20
pF
V
= ØV, V = – 10V
f = 1 MHz
rss
DS GS
Switching Characteristics
Turn ON Delay Time
Rise Time
V
= 1.5 V, V
= ØV
t
t
t
t
4
1
4
1
4
1
ns
ns
ns
ns
DD
GS(ON)
d(on)
V
= – 12V, I
= 10 mA
GS(OFF)
D(ON)
r
(IFN5432) R = 145 Ω
L
Turn OFF Delay Time
Fall Time
6
6
6
d(off)
f
(IFN5433) R = 143 Ω
L
30
30
30
(IFN5433) R = 140 Ω
L
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
RHOPOINT [ RHOPOINT COMPONENTS ]
