Preliminary Data Sheet
64Mbit – High Speed SDRAM (CAS2/150 MHz)
8Mx8 HSDRAM
Description
The Enhanced Memory Systems SM3603 High-Speed
SDRAM (HSDRAM) device is a high performance
version of the proposed JEDEC PC-133 SDRAM. While
compatible with standard SDRAM, it provides the faster
clock access time (4.5 ns), shorter random access latency
(31.2 ns), and fast bank cycle time (53.3 ns) needed to
improve system stability, capacity, and performance in
systems operating at 150 MHz bus speed. The
HSDRAM is ideal for any high performance system
including PCs, workstations, servers, communications
switches, DSP systems, 3-D graphics, and embedded
computers.
Features
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High Performance 150 MHz SDRAM
Fast 4.5 ns Clock Access Time
Low Latency Operation (2:3:2 @ 150 MHz)
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CAS Latency = 2
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RAS to CAS Delay = 3
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Precharge Delay = 2
Fast Random Access Time (31.2 ns)
Fast Random Cycle time (53.3 ns)
Programmable Burst length (1, 2, 4, 8, full page)
Programmable CAS Latency (2, 3)
Low Power suspend, Self Refresh, and Power Down
Modes Supported
4K Refresh / 64 ms
Single 3.3V
±
0.3V Power Supply
54-pin TSOP-II (0.8mm pin pitch)
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Block Diagram
ADDRESS BUFFERS
ROW DECODER
BA1
BA0
A(11:0)
BANK A
4K rows x
512 col x
8 bits
BANK B
4K rows x
512 col x
8 bits
BANK C
4K rows x
512 col x
8 bits
BANK D
4K rows x
512 col x
8 bits
SENSE AMPLIFIERS
COLUMN DECODER
SENSE AMPLIFIERS
COLUMN DECODER
SENSE AMPLIFIERS
COLUMN DECODER
SENSE AMPLIFIERS
COLUMN DECODER
Data I/O Buffers
CLK
CKE
/CS
/RAS
/CAS
/WE
DQM
DQ(7:0)
COMMAND
DECODER
and
TIMING
GENERATOR
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095;
http://www.edram.com
2000 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Revision 1.2
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