64Mbit – High Speed SDRAM (CAS2/150 MHz)
8Mx8 HSDRAM
Preliminary Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Description
Symbol
VDD
Value
Power Supply Voltage
-1V to +4.6V
Voltage on any Pin with Respect to Ground
Operating Temperature (ambient)
Storage Temperature
VIN, VOUT
TA
-0.5V to +4.6V
0°C to +70°C
-55°C to +125°C
TBD
Tstg
Power Dissipation
PD
DC Output Current (I/O pins)
IOUT
50mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these, or any other conditions above those listed in the
operational section of the specification, is not implied. Exposure to conditions at absolute maximum ratings for extended
periods may affect device reliability.
DC Operating Conditions (TA = 0°C to 70°C)
Symbol
VDD
VIH
Parameter
Min
3.0
2.0
-0.3
-
Typical
Max
3.6
Units
V
Notes
Supply Voltage
3.3
Input High Voltage
3.3
VDD + 0.3
0.8
V
VIL
Input Low Voltage
0.0
V
II(L)
Input Leakage Current
-
-
-
-
±1
µA
µA
V
IO(L)
VOH
VOL
Output Leakage Current
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = +4mA)
-
±1
2.4
0.0
VDD
0.4
V
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ±0.3V, not 100% tested)
Symbol
CIn1
Parameter
Min
2.5
2.5
3.5
Typical
3.3
Max
4.0
4.0
5.5
Units
pF
Notes
Input Capacitance (BA1, BA0, A0-11)
Input Capacitance (all control inputs)
I/O Capacitance (DQ0-7)
CIn2
3.3
pF
CI/O
4.5
pF
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
2000 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Page 6 of 20
Revision 1.2
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