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SM2605Q-6 参数 Datasheet PDF下载

SM2605Q-6图片预览
型号: SM2605Q-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX32, 4.3ns, CMOS, PQFP100, LQFP-100]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 9 页 / 109 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号SM2605Q-6的Datasheet PDF文件第1页浏览型号SM2605Q-6的Datasheet PDF文件第2页浏览型号SM2605Q-6的Datasheet PDF文件第3页浏览型号SM2605Q-6的Datasheet PDF文件第5页浏览型号SM2605Q-6的Datasheet PDF文件第6页浏览型号SM2605Q-6的Datasheet PDF文件第7页浏览型号SM2605Q-6的Datasheet PDF文件第8页浏览型号SM2605Q-6的Datasheet PDF文件第9页  
SM2605 - 2Mx32 ESDRAM  
ESDRAM Command Truth Table  
CKE  
Previous  
Cycle  
BA1,  
BA0  
A10,  
Current  
Cycle  
/CS  
L
/RAS /CAS  
/WE  
L
DQM  
X
A9  
A8/AP  
A7-A0  
Function  
Mode Register Set  
Extended Mode Register Set  
Bank Activate  
H
H
H
H
H
H
H
H
H
H
H
H
L
X
X
X
X
X
X
X
X
X
X
H
L
L
L
L
L
Op Code (BA1=0, BA0=0)  
Op Code (BA1=0, BA0=1)  
Row Address  
L
L
X
L
L
H
L
H
H
H
L
X
BS  
BS  
BS  
BS  
BS  
X
Read  
L
H
H
H
H
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
Column  
Read with Auto-Precharge  
Write  
L
L
X
Column  
L
L
X
0
Column  
Write with Auto-Precharge  
Burst Termination  
L
L
L
X
1
Column  
L
H
H
H
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Single Bank Precharge  
Precharge All Banks  
Auto-Refresh (CBR)  
Self Refresh Entry  
L
L
X
BS  
X
L
L
L
X
H
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
X
X
L
L
L
X
X
Self Refresh Exit  
H
X
X
L
NOP or DESEL  
X
X
Device Deselect (DESEL)  
No Operation (NOP)  
Clock Suspend Mode Entry  
Clock Suspend Mode Exit  
Power Down Mode Entry  
Power Down Mode Exit  
Data Write/Output Enable  
Data Mask/Output Disable  
H
H
H
L
H
L
X
H
X
X
X
H
X
X
X
H
X
X
X
X
X
X
X
X
X
X
H
L
X
X
H
L
NOP or DESEL  
NOP or DESEL  
X
X
H
X
X
X
X
H
H
X
X
X
X
X
X
X
X
L
X
H
X
Pin Description  
Symbol  
CLK  
Type  
Input  
Input  
Function  
Clock: All ESDRAM input signals are sampled on the positive edge of CLK.  
CKE  
Clock Enable: Activates the CLK signal when high and deactivates CLK internally. CKE low initiates  
the Power Down, Suspend, and Self-Refresh modes.  
/CS  
Input  
Chip Select: Active low /CS enables the command decoder and disables the command decoder when  
high. When the command decoder is disabled, new commands are ignored but previous operations  
continue.  
/RAS, /CAS,  
/WE  
Input  
Input  
Input  
Command Inputs: Sampled on the rising edge of CLK, these inputs define the command to be  
executed.  
BA1, BA0  
Bank Address: This input defines to which of the 4 banks a given command is being applied. This  
address input is also used to program the Mode Registers.  
A10-A0  
Address Inputs: A10-A0 defines the row address for the Bank Activate command. A7-A0 defines the  
column address for Read and Write commands. A8/AP invokes the Auto-Precharge operation. During  
manual Precharge commands, A8/AP low specifies a single bank precharge while A8/AP high  
precharges all banks. The address inputs are also used to program the Mode Registers.  
DQ31-DQ0  
Input/  
Data I/O: Data bus inputs and outputs. For Write cycles input data is applied to these pins and must  
be set-up and held relative to the rising edge of clock. For Read cycles, the device drives output data  
on these pins after the CAS latency is satisfied.  
Output  
DQM3-DQM0  
Input  
Data I/O Mask Inputs: DQM inputs mask write data (zero latency) and acts as a synchronous output  
enable (2 cycle latency) for read data. In the optional mode set via the Extended Mode register, output  
enable latency is one when CAS latency is one.  
VDD, VSS  
Supply  
Supply  
Power and ground for the input buffers and core logic.  
VDDQ, VSSQ  
Isolated power supply and ground for output buffers. VDDQ may be connected to either 3.3V or 2.5V  
power.  
Rev. 1.6  
4