CAS2/150MHz HSDRAM
64MB, 128MB DIMM
Preliminary Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Description
Symbol
VDD
Value
Power Supply Voltage
-1V to +4.6V
Voltage on any Pin with Respect to Ground
Operating Temperature (ambient)
Storage Temperature
VIN, VOUT
TA
-0.5V to +4.6V
0°C to +70°C
-55°C to +125°C
TBD
Tstg
Power Dissipation
PD
DC Output Current (I/O pins)
IOUT
50mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the
specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.
DC Operating Conditions (TA = 0°C to 70°C)
Symbol
VDD
VIH
Parameter
Supply Voltage
Min
3.0
2.0
-0.3
-
Typical
Max
3.6
Units
V
Notes
3.3
Input High Voltage
3.3
VDD + 0.3
0.8
V
VIL
Input Low Voltage
0.0
V
II(L)
Input Leakage Current
-
-
-
-
±1
µA
µA
V
IO(L)
VOH
VOL
Output Leakage Current
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = +4mA)
-
±1
2.4
0.0
VDD
0.4
V
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ±0.3V, not 100% tested)
Symbol
Parameter
64MB
non-ECC
38
128MB
non-ECC
Units
ECC
71
24
26
42
14
12
12
13
CIn1
CIn2
CIn3
CIn4
CIn5
CIn6
CI/O1
CI/O2
Input Capacitance (BA1, BA0, A0-11, RAS, CAS)
Input Capacitance (S0 - S3)
65
21
26
38
14
12
12
13
pF
pF
pF
pF
pF
pF
pF
pF
21
Input Capacitance (CK0 - CK3)
Input Capacitance (CKE0, CKE1)
Input Capacitance (DQMB0-7)
Input Capacitance (SCL, SA0-2)
I/O Capacitance (SDA)
26
38
12
12
12
I/O Capacitance (DQ0-63, CB0-7)
8.5
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
2000 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Page 6 of 12
Revision 1.0
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