P4C1049
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-15
-20
-25
-35
-45
-55
-70
Parameter
Unit
Sym.
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC
20
14
25
18
35
22
55
35
15
12
45
30
70
40
ns
ns
Write Cycle Time
tCW Chip Enable Time to End of
Write
tAW
Address Valid to End of
Write
12
14
16
20
25
35
40
ns
tAS
tWP
tAH
tDW
0
12
0
0
14
0
0
0
25
0
0
0
35
0
ns
ns
ns
0
AddressSet-upTime
Write Pulse Width
16
22
30
0
13
0
0
15
0
0
25
0
AddressHoldTime
Data Valid to End of Write
DateHoldTime
Write Enable to Output in
HighZ
11
0
9
0
ns
ns
20
0
30
0
tDH
tWZ
8
10
11
15
18
25
30 ns
ns
tOW
Output Active from End of
Write
3
3
3
5
5
5
5
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10,11)
Document # SRAM128 REV OR
Page 6 of 12
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
