P4C1049
MAXIMUMRATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TBIAS
TemperatureUnder
Bias
–55 to +125
°C
TerminalVoltagewith
Respect to GND
(up to 7.0V)
–0.5 to
TSTG
PT
IOUT
StorageTemperature
PowerDissipation
DCOutputCurrent
–65 to +150
°C
W
mA
VTERM
TA
VCC +0.5
V
1.0
50
OperatingTemperature
–55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING
VCC = 5.0V, TA = 25°C, f = 1.0MHz
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
VCC
Grade(2)
GND
Parameter
Typ.
Symbol
Conditions
Unit
Temperature
–55°C to +125°C
–40°C to +85°C
0°C to +70°C
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
CIN
Input Capacitance
Output Capacitance
VIN = 0V
8
8
pF
pF
0V
0V
0V
Military
Industrial
Commercial
VOUT = 0V
COUT
DC ELECTRICAL CHARACTERISTICS
Overrecommendedoperatingtemperatureandsupplyvoltage(2)
P4C1049
P4C1049L
Symbol
Parameter
Test Conditions
Unit
Min
Max
Min
Max
VIH
2.2
VCC +0.3
Input High Voltage
VCC +0.3
2.2
V
V
V
–0.3(3)
0.8
VIL
VHC
VLC
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
0.8
–0.3(3)
V
CC –0.2
VCC +0.3
VCC –0.2
VCC +0.3
–0.3(3)
0.2
–0.3(3)
0.2
V
VOL
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
0.4
V
0.4
VOH
Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
VCC = Max.
2.4
2.4
V
–5
n/a
+5
n/a
µA
Mil. –10
+10
+5
ILI
Input Leakage Current
Output Leakage Current
VIN = GND to VCC
Ind./Com’l.
–5
µA
–5
n/a
+5
n/a
–10
–5
+10
+5
VCC = Max.,
Mil.
ILO
CE = VIH,
Ind./Com’l.
VOUT = GND to VCC
___
___
___
___
40
n/a
mA
CE ≥ VIH
VCC= Max,
f = Max., Outputs Open
Mil.
Ind./Com’l.
45
40
Standby Power Supply
ISB
Current (TTL Input Levels)
___
___
___
___
10
n/a
15
10
mA
CE ≥ VHC
VCC= Max,
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ VHC
Mil.
Ind./Com’l.
Standby Power Supply
Current
ISB1
(CMOS Input Levels)
N/A = Not Applicable
Document # SRAM128 REV OR
Page 2 of 12
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
