P4C1049
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-15
-20
-25
-35
-45
-55
-70
Sym.
Parameter
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC
tAA
20
25
35
55
ReadCycleTime
15
45
70
ns
45
45
Address Access Time
15
15
20
20
25
25
35
35
55
55
70 ns
tAC
tOH
70 ns
Chip Enable Access Time
Output Hold from Address
Change
ns
ns
3
3
3
3
3
3
3
3
3
3
3
3
3
3
tLZ
Chip Enable to Output in
LowZ
tHZ
tOE
Chip Disable to Output in
HighZ
Output Enable Low to Data
Valid
30 ns
8
7
9
9
11
10
15
15
20
20
25
25
30 ns
ns
tOLZ
0
0
0
0
Output Enable Low to Low Z
0
0
0
0
0
0
0
0
0
0
tOHZ
Output Enable High to High Z
30 ns
ns
7
9
10
25
15
35
20
45
25
55
Chip Enable to Power Up
Time
tPU
tPD
Chip Disable to Power Down
15
20
70 ns
Time
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)(5)
Document # SRAM128 REV OR
Page 4 of 12
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
