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P4C1049-25FS36I 参数 Datasheet PDF下载

P4C1049-25FS36I图片预览
型号: P4C1049-25FS36I
PDF下载: 下载PDF文件 查看货源
内容描述: 高速512K x 8静态CMOS RAM [HIGH SPEED 512K x 8 STATIC CMOS RAM]
分类和应用:
文件页数/大小: 12 页 / 211 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1049  
AC TEST CONDITIONS  
TRUTH TABLE  
InputPulseLevels  
GND to 3.0V  
Mode  
Standby  
Standby  
CE OE W E  
I/O  
High Z  
High Z  
Power  
Standby  
Standby  
Input Rise and Fall Times  
InputTimingReferenceLevel  
OutputTimingReferenceLevel  
OutputLoad  
3ns  
1.5V  
1.5V  
H
X
X
X
X
X
High Z  
Active  
DOUT Disabled  
L
H
H
See Figures 1 and 2  
L
L
H
L
DOUT  
High Z  
Active  
Active  
L
X
Read  
Write  
Figure 1. Output Load  
Figure2. TheveninEquivalent  
* including scope and test fixture.  
Note:  
Because of the ultra-high speed of the P4C1049, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance leads  
that cause supply bounce must be avoided by bringing the VCC and  
ground planes directly up to the contactor fingers. A 0.01 µF high  
frequency capacitor is also required between VCC and ground. To avoid  
signal reflections, proper termination must be used; for example, a 50  
test environment should be terminated into a 50load with 1.73V  
(Thevenin Voltage) at the comparator input, and a 116resistor must  
be used in series with DOUT to match 166(Thevenin Resistance).  
Document # SRAM128 REV OR  
Page 8 of 12