P4C1049/P4C1049L - HIGH SPEED 512K x 8 STATIC CMOS RAM
maꢌimum ratingS(1)
rEcommEnDED oPErating conDitionS
Syꢇ Pꢃꢉꢃꢇeꢊeꢉ
Vꢃꢄꢂe
uꢆꢀꢊ
gꢉꢃde(2)
aꢇbꢀeꢆꢊ teꢇp
0°C to 70°C
gnD
0V
Vcc
Power Supply Pin with
VCC
Commercial
Industrial
Military
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
-0.5 to +7
V
Respect to GꢀD
-40°C to +85°C
-55°C to +125°C
0V
Terminal Voltage with
VTERM Respect to GꢀD (up to
7.0V)
-0.5 to VCC + 0.5
V
0V
caPacitancES(4)
TA
Operating Temperature
-55 to +125
-55 to +125
-65 to +150
1.0
°C
°C
°C
W
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
TBIAS Temperature ꢁnder Bias
TSTG Storage Temperature
Syꢇ Pꢃꢉꢃꢇeꢊeꢉ
cꢈꢆdꢀꢊꢀꢈꢆs typ uꢆꢀꢊ
PT
Power Dissipation
CIꢀ
Input Capacitance
VIꢀ=0V
8
8
pF
pF
IOꢁT DC Output Current
50
mA
COꢁT
Output Capacitance
VOꢁT=0V
Dc ElEctrical cHaractEriSticS
(Over Recommended Operating Temperature & Supply Voltage)(2)
P4c1049
P4c1049l
Syꢇ Pꢃꢉꢃꢇeꢊeꢉ
tesꢊ cꢈꢆdꢀꢊꢀꢈꢆs
uꢆꢀꢊ
mꢀꢆ
2.2
mꢃx
mꢀꢆ
2.2
mꢃx
VIH Input High Voltage
VCC + 0.3
0.8
VCC + 0.3
0.8
V
V
V
V
VIL Input Low Voltage
-0.3(3)
-0.3(3)
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
VCC - 0.2 VCC + 0.3 VCC - 0.2 VCC + 0.3
-0.3(3)
0.2
0.4
-0.3(3)
0.2
0.4
Output Low Voltage (TTL
Load)
VOL
IOL = +8 mA, VCC = Min
IOH = -4 mA, VCC = Min
V
V
Output High Voltage (TTL
Load)
VOH
2.4
-10
-5
2.4
-5
MIL
IꢀD/COM
MIL
+10
+5
+5
ꢀ/A
+5
VCC = Max,
VIꢀ = GꢀD to VCC
ILI
Input Leakage Current
µA
µA
ꢀ/A
-5
-10
-5
+10
+5
VCC = Max, CE = VIH,
VOꢁT = GꢀD to VCC
ILO Output Leakage Current
IꢀD/COM
MIL
ꢀ/A
—
ꢀ/A
40
—
45
CE ≥ VIH, VCC = Max, f = Max,
Standby Power Supply
ISB
mA
mA
Current (TTL Input Levels)
Outputs Open
IꢀD/COM
MIL
—
40
—
ꢀ/A
10
CE ≥ VHC, VCC = Max, f = 0,
Outputs Open
—
15
—
Standby Power Supply
ISB1 Current (CMOS Input
Levels)
IꢀD/COM
—
10
—
ꢀ/A
VIꢀ ≤ VLC or VIꢀ ≥ VHC
ꢀ/A = ꢀot applicable
Document # SRAM128 REV C
Page 2
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
