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P4C1049-20CWC 参数 Datasheet PDF下载

P4C1049-20CWC图片预览
型号: P4C1049-20CWC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, DIP-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 12 页 / 878 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1049/P4C1049L - HIGH SPEED 512K x 8 STATIC CMOS RAM  
Fꢀꢁꢂꢉe 1. oꢂꢊpꢂꢊ lꢈꢃd  
Fꢀꢁꢂꢉe 2. theveꢆꢀꢆ Eqꢂꢀvꢃꢄeꢆꢊ  
* including scope and test fixture.  
nꢈꢊe:  
Because of the ultra-high speed of the P4C1049/L, care must be taken  
whentestingthisdevice;aninadequatesetupcancauseanormalfunction-  
ing part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground. To avoid signal reflections,  
proper termination must be used; for example, a 50Ω test environment  
should be terminated into a 50Ω load with 1.73V (Thevenin Voltage) at  
the comparator input, and a 116Ω resistor must be used in series with  
DOꢁT to match 166Ω (Thevenin Resistance).  
orDEring inFormation  
Document # SRAM128 REV C  
Page 7