P3C1024L - ULTRA LOW POWER 128K X 8 CMOS STATIC RAM
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol Parameter
Test Conditions
Max
Unit
CIN
Input Capacitance
Output Capacitance
VIN=0V
8
pF
COUT
VOUT=0V
9
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol Parameter
Temperature Range
-55
-70
Unit
Commercial
10
8
mA
ICC Dynamic Operating Current
Industrial
12
10
mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol Parameter
Unit
Min
Max
Min
Max
tRC
tAA
tAC
tOH
tLZ
Read Cycle Time
55
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
70
70
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
10
10
10
10
tHZ
tOE
tOLZ
tOHZ
tPU
tPD
20
25
35
25
5
5
20
25
70
0
0
55
Document # SRAM132 REV A
Page 3
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