P3C1024L - ULTRA LOW POWER 128K X 8 CMOS STATIC RAM
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Supply Voltage
Commercial (0°C to 70°C)
3.0V ≤ VCC ≤ 3.6V
Industrial (-40°C to 85°C)
MAXIMUM RATINGS(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational
sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device reliability.
Sym
VCC
VTERM
TA
Parameter
Min
-0.3
-0.3
-55
Max
3.9
Unit
V
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND
Operating Ambient Temperature
Storage Temperature
VCC + 0.3
125
V
°C
°C
mA
mA
STG
IOUT
ILAT
-65
150
Output Current into Low Outputs
Latch-up Current
20
> 200
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym
Parameter
Test Conditions
Min
Max
Unit
Output High Voltage
(I/O0 - I/O7)
IOH = –1mA, VCC = 3.0V
VOH
2.4
V
Output Low Voltage
(I/O0 - I/O7)
IOL = 2.1mA, VCC = 3.0V
VOL
0.4
V
VIH
VIL
Input High Voltage
Input Low Voltage
2.2
VCC + 0.3
V
V
-0.3
0.8
IND
-2
-1
-2
-1
+2
+1
+2
+1
GND ≤ VIN ≤ VCC
ILI
Input Leakage Current
Output Leakage Current
µA
µA
COM
IND
GND ≤ VOUT ≤ VCC,
CE1 ≥ VIH or CE2 ≤ VIL
ILO
COM
VCC Current
TTL Standby Current
(TTL Input Levels)
VCC = 3.6V, IOUT = 0 mA
ISB
3
mA
µA
CE1 = VIH or CE2 = VIL
VCC Current
CMOS Standby Current
(CMOS Input Levels)
VCC = 3.6V, IOUT = 0 mA
ISB1
10
CE1 ≥ VCC -0.2V, CE2 ≤ 0.2V
Document # SRAM132 REV A
Page 2
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
