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RA1133J 参数 Datasheet PDF下载

RA1133J图片预览
型号: RA1133J
PDF下载: 下载PDF文件 查看货源
内容描述: RA1133J全帧CCD图像传感器 [RA1133J FULL FRAME CCD IMAGE SENSOR]
分类和应用: 传感器图像传感器
文件页数/大小: 8 页 / 191 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
 浏览型号RA1133J的Datasheet PDF文件第1页浏览型号RA1133J的Datasheet PDF文件第2页浏览型号RA1133J的Datasheet PDF文件第3页浏览型号RA1133J的Datasheet PDF文件第5页浏览型号RA1133J的Datasheet PDF文件第6页浏览型号RA1133J的Datasheet PDF文件第7页浏览型号RA1133J的Datasheet PDF文件第8页  
Full Frame CCD Sensor  
Timing Requirements  
(cont.)  
The timing shown in Figure 4a is  
repeated 1100 + 35 (or more) times  
to allow the readout of one complete  
line of the image.  
potential which is more positive than the low state  
channel potential of the transfer gate. Similar to a  
lateral antiblooming drain, charge will spill prefer-  
entially into the rapid discharge drain. Due to the  
fixed potential barrier, the HCCD cannot be  
completely cleared of charge and thus one horizontal  
shift sequence is required before resumption of valid  
data read.  
Figure 4b shows the timing require-  
ments for the vertical register. Over-  
lapping of the vertical clocks are  
normally longer than 5 µs. Rise and  
fall times of all clocks need to be 3 µs  
or longer in order to prevent spurious  
charge into the CCD channel. All  
vertical clock transitions should occur  
when the horizontal clocks are held  
steady.  
Table 1. Timing Diagram Characteristics  
Item  
Sym  
Min  
Typ  
Max  
Units  
rise/fall time  
clock period  
ø1, 2H  
ø1, 2H  
øSG  
50  
ns  
ns  
T1  
T2  
T3  
100  
Timing for MPP and normal mode is  
shown. The difference between the  
two modes is that during integration,  
all clocks must be held low for MPP  
mode.  
+0  
delay from  
øH2 edge  
ns  
øSG rise/fall time  
T4  
T5  
50  
50  
ns  
delay from  
øSG edge  
øRG  
+0  
+0  
ns  
ns  
ns  
Array Cooling  
delay from  
øRG edge  
øSG  
T6  
Both the dark current and the noise  
performance of the array can be im-  
proved by cooling. The dark current  
will be reduced by 50% for approx-  
imately every 6 - 8 ° C reduction in  
array temperature. Cooling can be  
T7  
T8  
T9  
rise/fall time  
øRG  
øRG  
ns  
ns  
10  
pulse duration  
øSG pulse duration  
100  
achieved via the integrated thermo-  
electric cooler. The bias supplies TEC+  
and TEC- electronically control this  
cooler. This is a two-stage cooler  
capable of reducing the temperature  
of the array 40° C from the ambient  
temperature. Additional cooling can be  
achieved by decreasing the ambient  
temperature or by cooling the heat sink  
on the TE cooler as shown in Figure 6  
and Figure 7.  
Figure 4b. Vertical CCD Shift Register Timing and Its Relationship to  
Horizontal Clocks in Normal and MPP Mode  
Quiescent  
Horizontal  
Clear Out 1  
1135 (+) ø  
State of All  
Horizontal  
Phases  
1135 (+) ø  
Clock Cycles  
to read 1 line  
Clock Cycles  
During ø  
Transitions  
C
ø
ø
Region of Interest  
1H  
2H  
Rapid access to regions of interest is  
facilitated by use of a lateral charge  
drain. The drain is constructed adjacent  
to the horizontal CCD (HCCD) shift register.  
Unwanted lines of data are quickly dis-  
posed without the requirement for hori-  
zontal transfer. In this manner, entire lines  
of image data can be disposed of by a single  
vertical shift sequence, with a time penalty  
of 20 µs. This is to be contrasted with the  
normal read sequence which includes both  
the vertical shift (20 µs), plus readout of  
the 1130 horizontal elements (2260 µs).  
As the unwanted lines are transferred from  
storage region into the HCCD, the hori-  
zontal phases are held high to maintain a  
surface  
ø
ø
1V  
2V  
Normal  
Mode  
ø
3V  
ø
TG  
End  
Integration  
Period  
Start  
Integration  
Period  
Repeat 330(+) Times to  
Read Out the Entire Image  
ø
1V  
2V  
3V  
ø
MPP  
Mode  
ø
ø
TG  
w w w . p e r k in e lm e r . c o m / o p t o  
DSP-303.01C - 8/2002 Page 4