欢迎访问ic37.com |
会员登录 免费注册
发布采购

RA1133J 参数 Datasheet PDF下载

RA1133J图片预览
型号: RA1133J
PDF下载: 下载PDF文件 查看货源
内容描述: RA1133J全帧CCD图像传感器 [RA1133J FULL FRAME CCD IMAGE SENSOR]
分类和应用: 传感器图像传感器
文件页数/大小: 8 页 / 191 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
 浏览型号RA1133J的Datasheet PDF文件第1页浏览型号RA1133J的Datasheet PDF文件第3页浏览型号RA1133J的Datasheet PDF文件第4页浏览型号RA1133J的Datasheet PDF文件第5页浏览型号RA1133J的Datasheet PDF文件第6页浏览型号RA1133J的Datasheet PDF文件第7页浏览型号RA1133J的Datasheet PDF文件第8页  
Full Fra m e CCD Se ns o r  
Imaging Area  
Figure 1. Pinout Configuration  
The imaging area is an array of 1100  
columns (vertical CCD shift registers).  
Each column has 330 picture elements.  
The pixel size is 24 µm by 24 µm. The  
total imaging area is 26.4 mm by 7.92 mm.  
Typical spectral response as a function  
of wavelength is shown in Figure 2.  
This is for both the standard array and  
an array coated with lumogen, an UV  
phosphor that extends the range of the  
detector into the ultraviolet.  
+
-
Ø1V  
Ø3V  
ØTG2  
VLD  
Ø2V  
ØTG1  
N/C  
VSUB  
LS  
Ø1H  
Ø2H  
ØLG1  
VDD  
VOUT  
VLD  
ØLG2  
LS  
TEMP+  
TEMP-  
VSUB  
ØTG2  
Ø3V  
Ø1V  
Ø2V  
ØTG1  
VSS  
VRD  
ØRG  
VOG  
In the vertical direction, each pixel  
ØSG  
corresponds to one stage (three electrodes)  
of the shift register. The three electrode  
groups are driven by three-phases (Ø1V -  
Ø3V) brought in from both edges of the  
array to improve clock electrode response  
time. Charge packets (imaging data) in the  
vertical register can be shifted to the hori-  
zontal readout by clocking the three phases  
(Ø1V, Ø2V and Ø3V). A transfer gate (ØTG) is  
provided at the interface of the vertical reg-  
ister. The transfer gate controls the transferring  
of charge into the horizontal readout register.  
Charge flow is from Ø3 gate of the vertical  
shift register into Ø1 gate of the horizontal  
readout register. The control function is  
performed by pulsing the transfer gate high  
to permit the charge flow from the vertical  
register into the horizontal register for  
readout. When the potential of the vertical  
register electrodes is held steady, a potential  
well is created beneath the storage gates  
Ø1V and Ø2V. When an image impinges  
on the sensing area, an electrical signal of  
the scene will be collected in the potential  
well during this integration period.  
Figure 2. Quantum Efficiency  
60  
50  
40  
30  
20  
10  
0
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
Wavelength, nm  
Following the integration interval, the  
collected charge (signal) in the array can  
be read out as a full frame image by  
transferring the charge, one or more rows at  
a time, into the horizontal shift register.  
From here, the charge can be shifted serially  
to the output amplifier. A mechanical  
shutter is needed to shield the array from  
incident light during the readout process.  
A strobe illumination could be used to  
stimulate the shuttered mode of operation.  
Image smearing degrades the performance,  
particularly at low data rates, unless  
shuttering is provided.  
Figure 3. Functional Diagram  
Imaging Area  
Ø1V  
Ø2V  
Ø3V  
1100 (H) x 330 (V) - active pixels  
Horizontal Register  
ØTG  
Ø1H  
Ø2H  
ØLG  
VLD  
The horizontal shift register is driven by  
two phase clocks (Ø1H and Ø2H). The  
horizontal register has 1100 stages plus  
an extension of 35 stages ( 3 dummy stages,  
16 leading isolation stages and 16 trailing  
isolation stages). As a result, amplifier  
power is dissipated more efficiently and  
dark current generation by localized heating  
is minimized.  
Horizontal CCD Shift  
Output Buffer  
www.perkinelmer.com/opto  
DSP-303.01C - 8/2002W Page 2