ESMT
M13S128168A
DC Specifications
Version
Parameter
Symbol
Test Condition
Unit Note
-6
-5
Operation Current
(One Bank Active)
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
IDD0
170
145
mA
Burst Length = 2 tRC = tRC (min), CL=
2.5 IOUT = 0mA, Active-Read-
Precharge
Operation Current
(One Bank Active)
IDD1
IDD2P
IDD2N
IDD3P
175
40
150
40
mA
mA
mA
mA
Precharge Power-down Standby
Current
CKE ≤ VIL(max), tCK = tCK (min), All
banks idle
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
tCK (min)
=
Idle Standby Current
115
50
95
Active
Power-down
Standby
All banks ACT, CKE ≤ VIL(max), tCK
tCK (min)
=
=
45
Current
One bank; Active-Precharge, tRC
Active Standby Current
IDD3N
t
RAS(max),
120
110
mA
tCK = tCK (min)
Burst Length = 2, CL= 2.5 , tCK = tCK
(min), IOUT = 0Ma
Operation Current (Read)
Operation Current (Write)
IDD4R
IDD4W
245
240
215
200
mA
mA
Burst Length = 2, CL= 2.5 , tCK = tCK
(min)
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
270
5
250
5
mA
mA
tRC ≥ tRFC(min)
CKE ≤ 0.2V
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
VIH(AC)
VIL(AC)
VID(AC)
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VREF + 0.31
V
V
V
VREF - 0.31
VDDQ+0.6
0.7
1
2
Input Different Voltage, CLK and CLK inputs
VIX(AC)
0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Input Crossing Point Voltage, CLK and CLK inputs
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(VDD = 2.375V~2.75V, VDDQ =2.375V~2.75V, TA = 25°C , f = 1MHz)
Parameter
Symbol
CIN1
Min
2.5
Max
3.5
Unit
pF
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
CIN2
2.5
3.5
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
COUT
CIN3
4.0
4.0
5.5
5.5
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8 6/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
