ESMT
M12L16161A
SDRAM
512K x 16Bit x 2Banks
Synchronous DRAM
FEATURES
GENERAL DESCRIPTION
The M12L16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
z
z
z
z
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
-
-
CAS Latency (2 & 3 )
Burst Length (1, 2, 4, 8 & full page)
Burst Type (Sequential & Interleave)
z
All inputs are sampled at the positive going edge of the
system clock
z
z
z
z
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
ORDERING INFORMATION
32ms refresh period (2K cycle)
Part NO.
MAX Freq. PACKAGE COMMENTS
M12L16161A-5TG
M12L16161A-7TG
M12L16161A-7BG
TSOP(II)
TSOP(II)
VFBGA
Pb-free
Pb-free
Pb-free
200MHz
143MHz
143MHz
PIN CONFIGURATION (TOP VIEW)
1
2
3
4
5
6
7
VDD
DQ0
DQ1
VSSQ
DQ2
DQ3
VDDQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VDDQ
LDQM
WE
1
VSS
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
DQ0
DQ15
VDD
A
B
VSS
2
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
N.C/RFU
UDQM
CLK
CKE
N.C
VDDQ
VSSQ
DQ1
DQ2
DQ14
DQ13
VSSQ
VDDQ
3
4
C
D
E
F
5
6
DQ4
DQ3
DQ5
DQ12
DQ10
DQ9
DQ11
7
VDDQ
8
VSSQ
9
VSSQ
NC
VDDQ
NC
DQ6
DQ7
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
G
H
J
DQ8
NC
NC
NC
NC
NC
WE
UDQM
LDQM
CAS
RAS
CS
NC
CLK
NC
A9
RAS
NC
CAS
CS
K
L
CKE
BA
A9
NC
A0
NC
A11
A8
M
N
P
R
A10/AP
A0
A8
A7
A10
A7
A1
A6
A2
A5
A1
A6
A5
A4
A2
A3
A3
A4
50PIN TSOP(II)
(400mil x 825mil)
(0.8 mm PIN PITCH)
60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
VDD
VSS
VSS
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2005
Revision : 2.4 2/30
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
