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M11L416256SA-35TG 参数 Datasheet PDF下载

M11L416256SA-35TG图片预览
型号: M11L416256SA-35TG
PDF下载: 下载PDF文件 查看货源
内容描述: 256千×16 EDO DRAM页模式 [256 K x 16 DRAM EDO PAGE MODE]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 16 页 / 411 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EliteMT  
M11L416256SA  
CAPACITANCE (Ta = 25 °C , VCC = 3.3V ± 10%)  
PARAMETER  
SYMBOL  
CI1  
TYP  
MAX  
5
UNIT  
pF  
Input Capacitance (address)  
-
-
-
Input Capacitance (RAS , CASH, CASL , WE , OE )  
CI2  
7
pF  
Output capacitance (I/O0~I/O15)  
CI / O  
10  
pF  
AC ELECTRICAL CHARACTERISTICS (Ta = 0 to 70 °C , VCC =3.3V ± 10%, VSS = 0V) (note 14)  
Test Conditions  
Input timing reference levels : 0.8V, 2.0V  
Output reference level : VOL= 0.8V, VOH=2.0V  
Output Load : 2TTL gate + CL (50pF)  
Assumed tT = 2ns  
-35  
PARAMETER  
SYMBOL  
UNIT  
NOTES  
MIN  
65  
MAX  
Read or Write Cycle Time  
Read Write Cycle Time  
tRC  
ns  
ns  
tRWC  
95  
EDO-Page-Mode Read or Write Cycle  
Time  
tPC  
14  
42  
ns  
ns  
22  
22  
EDO-Page-Mode Read-Write Cycle  
Time  
tPCM  
tRAC  
tCAC  
35  
10  
10  
18  
20  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
4
Access Time From RAS  
Access Time From CAS  
5,20  
13,20  
tOAC  
tAA  
Access Time From OE  
Access Time From Column Address  
tACP  
20  
25  
Access Time From CAS Precharge  
RAS Pulse Width  
tRAS  
tRASC  
tRSH  
tRP  
35  
35  
10  
25  
5
10K  
100K  
RAS Pulse Width (EDO Page Mode)  
RAS Hold Time  
ns  
ns  
ns  
ns  
ns  
ns  
RAS Precharge Time  
CAS Pulse Width  
tCAS  
tCSH  
tCP  
24  
19  
10K  
25  
30  
5
CAS Hold Time  
CAS Precharge Time  
RAS to CAS Delay Time  
6,23  
7,18  
19  
tRCD  
tCRP  
10  
5
0
5
8
0
5
ns  
ns  
ns  
ns  
ns  
ns  
CAS to RAS Precharge Time  
Row Address Setup Time  
Row Address Hold Time  
tASR  
tRAH  
tRAD  
17  
8
RAS to Column Address Delay Time  
Column Address Setup Time  
Column Address Hold Time  
Column Address Hold Time (Reference  
to RAS )  
tASC  
tCAH  
18  
18  
tAR  
30  
ns  
ns  
tRAL  
tRCS  
18  
0
Column Address to RAS Lead Time  
Read Command Setup Time  
15,18  
Elite Memory Technology Inc  
Publication Date: Aug. 2005  
Revision : 1.4  
4/16