EliteMT
M11L416256SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 3.3V ± 10% unless otherwise noted)
PARAMETER
Supply Voltage
CONDITIONS
SYMBOL
VCC
MIN
3.0
0
MAX
3.6
UNITS NOTES
V
V
1
Supply Voltage
VSS
0
Input High Voltage
Input Low Voltage
Input Leakage Current
VIH
2.0
-0.3
-10
VCC +0.3
0.8
V
1
1
VIL
V
μ A
0V ≤ VIN ≤ VIH(max)
ILI
10
0V ≤ VOUT ≤ VCC
Output(s) disable
Output Leakage Current
μ A
ILO
-10
10
Output High Voltage
Output Low Voltage
IOH = -2 mA
IOL = 2 mA
VOH
VOL
2.4
-
-
V
V
0.4
Note : 1.All Voltages referenced to VSS
MAX
PARAMETER
CONDITIONS
SYMBOL
ICC1
UNITS NOTES
-35
Operating Current
Standby Current
150
mA
mA
1,2
RAS , CAS cycling , tRC =min
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4
ICC2
mA
mA
mA
mA
CMOS interface, RAS , CAS ≥ VCC-0.2V
2
tRC = min
tPC = min
150
150
5
2
1,3
1
RAS only refresh Current
EDO Page Mode Current
Standby Current
ICC3
ICC4
RAS =VIH, CAS = VIL
ICC5
ICC6
CAS BeforeRAS
Refresh
Current
tRC = min
150
400
mA
Battery Backup Current
(S-ver. only)
RAS , CAS ≤ 0.2V, DOUT = High-Z,
μ A
ICC7
CMOS interface
RAS = CAS = VIL,
Self Refresh Current
(S-ver. only)
μ A
400
ICC8
WE = OE = A0~A8 = VCC -0.2 or 0.2V
DQ0~DQ15 = VCC -0.2, 0.2V or open
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4 3/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
