M11L416256A/M11L416256SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
A
°
C
to +70°
Operating Temperature, T (ambient) ….0
C
Storage Temperature (plastic) ……….-55
to +150
°C
°C
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
PARAMETER
A
CC
(0 ° ≤ T ≤ 70 ° ; V = 3.3V ± 10% unless otherwise noted)
C
C
CONDITIONS
SYMBOL
MIN
3.0
0
MAX
3.6
0
UNITS NOTES
Supply Voltage
CC
V
V
V
1
Supply Voltage
SS
IH
V
CC
Input High Voltage
Input Low Voltage
Input Leakage Current
V
V
2.0
-0.3
-10
V
+0.3
V
1
1
IL
0.8
10
V
µ A
LI
IN
IH
I
0V ≤ V ≤ V (max)
0V ≤ V
Output(s) disable
OUT ≤ VCC
Output Leakage Current
µ A
LO
I
-10
10
OH
OH
Output High Voltage
Output Low Voltage
I
I
= -2 mA
= 2 mA
V
2.4
-
-
V
V
OL
OL
V
0.4
SS
Note : 1.All Voltages referenced to V
MAX
-25 -28 -30 -35 -40
210 190 170 150 135 mA
PARAMETER
CONDITIONS
SYMBOL
UNITS NOTES
CC1
Operating Current
I
1,2
RC
RAS , CAS cycling , t =min
IH
TTL interface , RAS , CAS = V
,
4
4
4
4
4
mA
OUT
D
=High-Z
CC2
Standby Current
I
mA
CC
CMOS interface, RAS , CAS ≥ V -0.2V
2
2
2
2
2
RC
t
= min
= min
210 190 170 150 135 mA
210 190 170 150 135 mA
2
1,3
1
RAS only refresh Current
EDO Page Mode Current
Standby Current
CC3
CC4
I
I
PC
t
5
5
5
5
5
mA
IH
IL
RAS =V , CAS = V
CC5
CC6
I
I
CAS BeforeRAS Refresh
Current
RC
t
= min
210 190 170 150 135 mA
Battery Backup Current
(S-ver. only)
OUT
RAS , CAS ≤ 0.2V, D
= High-Z,
µ A
CC7
CC8
I
I
400 400 400 400 400
CMOS interface
IL
RAS = CAS = V ,
Self Refresh Current
(S-ver. only)
µ A
400 400 400 400 400
WE
CC
= OE = A0~A8 = V -0.2 or 0.2V
DQ0~DQ15 = V -0.2, 0.2V or open
CC
:
CC
Note 1.I max is specified at the output open condition.
IL .
IH
2. Address can be changed twice or less while RAS =V
3. Address can be changed once or less while CAS =V
.
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision : 1.3 3/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
