M11L416256A/M11L416256SA
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tR W C
tR A S
t RP
V I H
V I L
R AS
CASL ,C AS H
A D D R
tC S H
tR S H
tC R P
tC A S , tC L C H
tRC D
V I H
I L
V
tA R
tR AL
tC AH
tR A D
tR A H
tA S C
tA S R
IH
V
V IL
RO W
CO LU M N
R O W
tC W L
tR W L
t W P
t R W D
tC W D
tA W D
tR C S
V IH
V IL
W E
t A A
tR A C
tC AC
tD H
t D S
tC L Z
V I / O H
V I / O L
I/O
O U T
VAL I D
D
O PEN
VA LID
D
I N
tO A C
tO E H
tO F F 2
VI H
VI L
OE
EDO-PAGE-MODE READ CYCLE
tR AS C
tR P
V I H
V I L
RA S
tP C
( N O T E2 )
tC S H
tRC D
tR S H
tC A S , tC L C H
tC R P
tC AS , tC L C H
tC A S , tC L C H
tC P
t CP
tC P
V IH
V IL
CA SL ,C ASH
tA R
tA S C
tR A D
tR A H
tR AL
tA S C
tAS R
tC A H
tC A H
tC AH
tA S C
VI H
VI L
AD D R
C O L U M N
C O L U M N
R O W
R O W
C O L U M N
tR R H
tRC H
tR C S
V I H
V I L
W E
t A A
t A A
tA A
tR A C
tA C P
tC AC
tA C P
tC A C
tC AC
N O TE 1
tO F F 1
tC L Z
tO E H C
tC O H
tC L Z
VO H
VO L
V A L I D
D A T A
I/O
OE
VAL ID D AT A
O PE N
VALID D ATA
O PE N
tO A C
tO E S
tO A C
tO E S
tO F F 2
tO F F 2
V I H
I L
V
tO E P
DON'T CARE
UNDEFINED
OFF1
*NOTE : 1. t
is referenced from the rising edge of RAS or CAS , whichever occurs last.
PC
2. t can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising edge of
PC
CAS . Both measurements must meet the t specification.
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision : 1.3 9/16
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
