EliteMT
M11B416256A
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 5V ± 10% unless otherwise noted)
PARAMETER
Supply Voltage
CONDITIONS
SYMBOL
VCC
MIN
4.5
0
MAX
5.5
UNITS NOTES
V
V
1
Supply Voltage
VSS
0
Input High Voltage
Input Low Voltage
Input Leakage Current
VIH
2.4
-0.3
-10
VCC +0.3
0.8
V
1
1
VIL
V
μ A
0V ≤ VIN ≤ VIH (max)
ILI
10
0V ≤ VOUT ≤ VCC
Output(s) disable
Output Leakage Current
μ A
ILO
-10
10
2
Output High Voltage
Output Low Voltage
IOH = -5 mA
IOL = 4.2 mA
VOH
VOL
2.4
-
-
V
V
0.4
Note : 1.All Voltages referenced to VSS
2. 0V ≤ VOUT ≤ 5.0V, VCC ≤ 5.0V
MAX
UNITS NOTES
PARAMETER
CONDITIONS
SYMBOL
ICC1
-25
-35
Operating Current
Standby Current
210
4
150
mA
mA
1,2
RAS , CAS cycling , tRC =min
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4
ICC2
2
2
mA
mA
mA
mA
CMOS interface, RAS , CAS ≥ VCC-0.2V
tRC = min
tPC = min
210
210
5
150
150
5
2
1,3
1
RAS only refresh Current
EDO Page Mode Current
Standby Current
ICC3
ICC4
RAS =VIH, CAS = VIL
ICC5
ICC6
CAS BeforeRAS
Refresh
Current
tRC = min
210
150
mA
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date : Jun. 2006
Revision : 2.1 3/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
