Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
100
1.4
1.2
1
Ciss
ID=1mA
C
oss
10
0.8
0.6
0.4
I =250 A
μ
D
Crss
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
5
10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=20V
8
6
4
2
0
0.1
VDS=80V
VDS=10V
ID=0.26A
Ta=25°C
Pulsed
0
1/5 2/5 3/5 4/5
1
1
1
1
1/5 2/5 3/5 4/5
1
2
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
1
0.25
0.2
100μs
RDSON
Limited
1ms
0.1
0.15
0.1
10ms
0.01
100ms
TA=25°C, Tj=150°C
θ
1s
0.05
0
VGS=10V, R JA=416°C/W
JA
θ
TA=25°C, VGS=10V, R =416°C/W
Single Pulse
DC
0.001
0.01
0.1
V
1
DS, Drain-Source Voltage(V)
10
100
1000
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
BSS123BKN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
