Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Limits
100
±20
Unit
V
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
190
152
760
300
ID
mA
IDM
PD
*1
*2
Total Power Dissipation
mW
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
-55~+150
-55~+150
°C
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient
RθJA
416 *2
°C/W
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS*
VGS(th)
IGSS
Min.
Typ.
Max.
Unit
V
Test Conditions
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=80V, VGS=0V
100
1.0
-
-
-
-
-
-
-
-
-
-
2.8
3.0
-
-
2.5
±10
1
μA
IDSS
°
5
VDS=80V, VGS=0V, Tj=55 C
ID=100mA, VGS=10V
ID=100mA, VGS=4.5V
VDS=10V, ID=100mA
5.6
7.0
-
RDS(ON)*
GFS
Ω
100
mS
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
26
11
3.1
4.2
15.2
10.2
18.8
1.85
0.72
0.17
39
16
4.6
pF
ns
VDS=25V, VGS=0V, f=1MHz
Coss
Crss
*tr
*td
*tstg
*tf
*Qg
6.3
22.8
15.3
28.2
2.8
1.1
0.26
Ω
VDS=50V, ID=0.26A, VGS=10V, RG=6
nC
V
VDS=80V, ID=0.26A, VGS=10V
IS=0.34A
*Qgs
*Qgd
Body Diode
*VSD
-
0.9
1.3
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BSS123BKN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
