Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VGS=3.5V
0.8
0.6
0.4
9V,
10V, 8V,7V,6V,5V,4.5V,4V
I =250 A,
μ
D
VGS=0V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
VDS, Drain-Source Voltage(V)
8
9
10
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10
1.2
Tj=25°C
VGS=0V
1
0.8
0.6
0.4
0.2
VGS=4.5V
Tj=150°C
VGS=10V
1
0.01
0.1
1
0
0.1 0.2
0.3
0.4 0.5
0.6 0.7
0.8
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
2.4
2
VGS=10V, ID=100mA
RDS(ON)@Tj=25°C:2.8Ω typ.
9
8
7
6
5
4
3
2
1
0
ID=100mA
1.6
1.2
0.8
0.4
0
VGS=4.5V, ID=100mA
RDS(ON)@Tj=25°C : 3.0Ω typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
V
4
6
GS, Gate-Source Voltage(V)
8
Tj, Junction Temperature(°C)
BSS123BKN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
