Typical Performance
100
100
80
60
40
20
0
Conditions:
TJ = 25 °C
Conditions:
DS = 7.5 A
I
V
I
V
DD = 400 V
DS = 7.5 A
GS = -4V/+15 V
V
R
V
DD = 400 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
80
60
40
20
0
ETotal
FWD = C3M0280090D
L = 220 μH
FWD = C3M0280090D
L = 220 μH
ETotal
EOn
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
45
Conditions:
TJ = 25 °C
40
35
30
25
20
15
10
5
V
I
V
DD = 400 V
DS = 7.5 A
GS = -4V/+15 V
FWD = C3M0280090D
L = 220 μH
td(on)
td(off)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0280090D Rev. - , 11-2015
CREE [ CREE, INC ]
