Typical Performance
15
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
TJ = 150 °C
VGS = -4 V
-5
10
TJ = 25 °C
VGS = 0 V
TJ = -55 °C
VGS = -2 V
-10
-15
-20
5
0
Conditions:
TJ = -55°C
tp < 200 µs
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -4 V
VGS = -4 V
-5
VGS = 0 V
-5
VGS = 0 V
VGS = -2 V
VGS = -2 V
-10
-15
-20
-10
-15
-20
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
GS = VDS
IDS = 1.2 mA
Conditions:
V
I
I
DS = 7.5 A
GS = 10 mA
12
8
VDS = 400 V
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0280090D Rev. - , 11-2015