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C3M0280090D 参数 Datasheet PDF下载

C3M0280090D图片预览
型号: C3M0280090D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 1197 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
20  
20  
18  
16  
14  
12  
10  
8
VGS = 15 V  
Conditions:  
TJ = -55 °C  
Conditions:  
TJ = 25 °C  
tp = < 200 µs  
VGS = 15 V  
18  
VGS = 13 V  
tp = < 200 µs  
16  
VGS = 13 V  
14  
12  
10  
8
VGS = 11 V  
VGS = 9 V  
VGS = 11 V  
VGS = 9 V  
6
6
VGS = 7 V  
VGS = 7 V  
4
4
2
2
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 1. Output Characteristics TJ = -55 ºC  
Figure 2. Output Characteristics TJ = 25 ºC  
20  
18  
16  
14  
12  
10  
8
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Conditions:  
TJ = 150 °C  
tp = < 200 µs  
Conditions:  
IDS = 7 A  
VGS = 15 V  
tp < 200 µs  
VGS = 15 V  
VGS = 13 V  
VGS = 11 V  
VGS = 9 V  
6
VGS = 7 V  
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
Junction Temperature, TJ (°C)  
Drain-Source Voltage, VDS (V)  
Figure 3. Output Characteristics TJ = 150 ºC  
Figure 4. Normalized On-Resistance vs. Temperature  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
600  
500  
400  
300  
200  
100  
0
Conditions:  
IDS = 7 A  
tp < 200 µs  
Conditions:  
VGS = 15 V  
tp < 200 µs  
VGS = 11 V  
VGS = 13 V  
TJ = 150 °C  
TJ = -55 °C  
TJ = 25 °C  
VGS = 15 V  
0
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Drain-Source Current, IDS (A)  
Junction Temperature, TJ (°C)  
Figure 5. On-Resistance vs. Drain Current  
For Various Temperatures  
Figure 6. On-Resistance vs. Temperature  
For Various Gate Voltage  
3
C3M0280090D Rev. - , 11-2015