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C3M0032120D 参数 Datasheet PDF下载

C3M0032120D图片预览
型号: C3M0032120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 793 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
0
-20  
-40  
-60  
-80  
-100  
-120  
-20  
-40  
-60  
-80  
-100  
-120  
VGS = 0 V  
VGS = 0 V  
VGS = 5 V  
VGS = 5 V  
VGS = 10 V  
VGS = 15 V  
VGS = 10 V  
VGS = 15 V  
Conditions:  
TJ = -40 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
Drain-Source Voltage VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 13. 3rd Quadrant Characteristic at -40 ºC  
Figure 14. 3rd Quadrant Characteristic at 25 ºC  
120  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
VGS = 0 V  
100  
80  
60  
40  
20  
0
-20  
-40  
-60  
-80  
-100  
-120  
VGS = 5 V  
VGS = 10 V  
VGS = 15 V  
Conditions:  
TJ = 175 °C  
tp < 200 µs  
0
200  
400  
600  
800  
1000  
1200  
Drain to Source Voltage, VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 15. 3rd Quadrant Characteristic at 175 ºC  
Figure 16. Output Capacitor Stored Energy  
10000  
10000  
1000  
100  
10  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
f = 100 kHz  
Ciss  
Ciss  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
f = 100 kHz  
1000  
100  
10  
Coss  
Coss  
Crss  
Crss  
1
1
0
50  
100  
Drain-Source Voltage, VDS (V)  
150  
200  
0
200  
400  
600  
800  
1000  
1200  
Drain-Source Voltage, VDS (V)  
Figure 17. Capacitances vs. Drain-Source  
Voltage (0 - 200V)  
Figure 18. Capacitances vs. Drain-Source  
Voltage (0 - 1200V)  
6
C3M0032120D Rev. -, 08-2019