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C3M0032120D 参数 Datasheet PDF下载

C3M0032120D图片预览
型号: C3M0032120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 793 K
品牌: CREE [ CREE, INC ]
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Electrical Characteristics (TC = 25˚C unless otherwise specified)  
Symbol  
Parameter  
Min.  
1200  
1.8  
Typ.  
Max. Unit  
Test Conditions  
VGS = 0 V, ID = 100 μA  
Note  
V(BR)DSS  
Drain-Source Breakdown Voltage  
V
2.5  
2.0  
1
3.6  
V
V
VDS = VGS, ID = 11.5 mA  
VGS(th)  
Gate Threshold Voltage  
Fig. 11  
VDS = VGS, ID = 11.5 mA, TJ = 175ºC  
VDS = 1200 V, VGS = 0 V  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
50  
250  
43  
μA  
nA  
10  
VGS = 15 V, VDS = 0 V  
23  
32  
VGS = 15 V, ID = 40 A  
Fig. 4,  
5, 6  
RDS(on)  
Drain-Source On-State Resistance  
Transconductance  
mΩ  
57.6  
27  
VGS = 15 V, ID = 40 A, TJ = 175ºC  
VDS= 20 V, IDS= 40 A  
gfs  
S
Fig. 7  
22  
VDS= 20 V, IDS= 40 A, TJ = 175ºC  
Ciss  
Input Capacitance  
Output Capacitance  
3357  
129  
VGS = 0 V, VDS = 1000 V  
Fig. 17,  
18  
Coss  
pF  
f = 100 kHz  
Crss  
Eoss  
EON  
Reverse Transfer Capacitance  
Coss Stored Energy  
8
AC  
V
= 25 mV  
76  
μJ  
Fig. 16  
Fig. 26  
Turn-On Switching Energy (SiC Diode FWD)  
1.94  
VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,  
RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC  
mJ  
EOFF  
EON  
Turn Off Switching Energy (SiC Diode FWD)  
Turn-On Switching Energy (Body Diode FWD)  
Turn Off Switching Energy (Body Diode FWD)  
0.79  
3.10  
0.72  
VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,  
RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC  
mJ  
ns  
Fig. 26  
Fig. 27  
EOFF  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
107  
22  
VDD = 800 V, VGS = -4 V/15 V  
RG(ext) = 5 Ω, ID = 40 A, L= 157  
Timing relative to VDS, Inductive load  
Turn-Off Delay Time  
Fall Time  
39  
19  
,
RG(int)  
Qgs  
Qgd  
Qg  
Internal Gate Resistance  
Gate to Source Charge  
Gate to Drain Charge  
Total Gate Charge  
1.7  
35  
f = 1 MHz VAC = 25 mV  
VDS = 800 V, VGS = -4 V/15 V  
ID = 40 A  
Per IEC60747-8-4 pg 21  
40  
nC  
Fig. 12  
114  
2
C3M0032120D Rev. -, 08-2019