Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
VGS = 0 V, ID = 100 μA
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
2.5
2.0
1
3.6
V
V
VDS = VGS, ID = 11.5 mA
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 11.5 mA, TJ = 175ºC
VDS = 1200 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
250
43
μA
nA
10
VGS = 15 V, VDS = 0 V
23
32
VGS = 15 V, ID = 40 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
57.6
27
VGS = 15 V, ID = 40 A, TJ = 175ºC
VDS= 20 V, IDS= 40 A
gfs
S
Fig. 7
22
VDS= 20 V, IDS= 40 A, TJ = 175ºC
Ciss
Input Capacitance
Output Capacitance
3357
129
VGS = 0 V, VDS = 1000 V
Fig. 17,
18
Coss
pF
f = 100 kHz
Crss
Eoss
EON
Reverse Transfer Capacitance
Coss Stored Energy
8
AC
V
= 25 mV
76
μJ
Fig. 16
Fig. 26
Turn-On Switching Energy (SiC Diode FWD)
1.94
VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC
mJ
EOFF
EON
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
0.79
3.10
0.72
VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A,
RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC
mJ
ns
Fig. 26
Fig. 27
EOFF
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
107
22
VDD = 800 V, VGS = -4 V/15 V
RG(ext) = 5 Ω, ID = 40 A, L= 157
Timing relative to VDS, Inductive load
Turn-Off Delay Time
Fall Time
39
19
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
1.7
35
Ω
f = 1 MHz VAC = 25 mV
VDS = 800 V, VGS = -4 V/15 V
ID = 40 A
Per IEC60747-8-4 pg 21
40
nC
Fig. 12
114
2
C3M0032120D Rev. -, 08-2019
CREE [ CREE, INC ]
