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C3M0032120D 参数 Datasheet PDF下载

C3M0032120D图片预览
型号: C3M0032120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 793 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
6
6
5
4
3
2
1
0
Conditions:  
TJ = 25 °C  
VDD = 800 V  
IDS = 40 A  
VGS = -4V/+15 V  
FWD C3M0032120D  
L = 157 μH  
Conditions:  
IDS = 40 A  
VDD = 800 V  
RG(ext) = 5 Ω  
VGS = -4V/+15 V  
L = 157 μH  
FWD = C3M0032120D  
FWD = C4D20120A  
5
ETotal  
4
3
2
1
0
ETotal  
EOn  
EOn  
ETotal with diode  
EOn with diode  
EOff with diode  
EOff  
EOff  
0
5
10  
15  
20  
25  
0
25  
50  
75  
100  
125  
150  
175  
200  
External Gate Resistor RG(ext) (Ohms)  
Junction Temperature, TJ (°C)  
Figure 26. Clamped Inductive Switching Energy vs.  
Temperature  
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)  
200  
150  
100  
50  
Conditions:  
TJ = 25 °C  
VDD = 800 V  
IDS = 40 A  
VGS = -4V/+15 V  
FWD = C3M0032120D  
td(on)  
td(off)  
tr  
tf  
0
0
5
10  
15  
20  
25  
External Gate Resistor RG(ext) (Ohms)  
Figure 27. Switching Times vs. RG(ext)  
Figure 28. Switching Times Definition  
8
C3M0032120D Rev. -, 08-2019