Typical Performance
6
6
5
4
3
2
1
0
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 40 A
VGS = -4V/+15 V
FWD C3M0032120D
L = 157 μH
Conditions:
IDS = 40 A
VDD = 800 V
RG(ext) = 5 Ω
VGS = -4V/+15 V
L = 157 μH
FWD = C3M0032120D
FWD = C4D20120A
5
ETotal
4
3
2
1
0
ETotal
EOn
EOn
ETotal with diode
EOn with diode
EOff with diode
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
200
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
200
150
100
50
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 40 A
VGS = -4V/+15 V
FWD = C3M0032120D
td(on)
td(off)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figure 28. Switching Times Definition
8
C3M0032120D Rev. -, 08-2019
CREE [ CREE, INC ]
