(T = 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
4.6
Max.
Unit
Test Conditions
Note
V
VGS = -4 V, ISD = 20 A, T = 25 °C
J
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.2
V
A
VGS = -4 V, ISD = 20 A, T = 175 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
62
Note 1
Note 1
VGS = -4 V, TC = 25˚C
120
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
69
848
19
ns
nC
A
VGS = -4 V, ISD = 40 A, VR = 800 V
Qrr
Reverse Recovery Charge
Peak Reverse Recovery Current
Note 1
dif/dt = 1500 A/µs, T = 175 °C
J
Irrm
Thermal Characteristics
Symbol
RθJC
Parameter
Typ.
0.45
40
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
3
C3M0032120D Rev. -, 08-2019