Typical Performance
120
100
80
60
40
20
0
Conditions:
DS = 2 A
Conditions:
TJ = 25 °C
I
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
V
DD = 1200 V
DS = 2 A
GS = -5/+20 V
100
80
60
40
20
0
I
V
ETotal
FWD = C2M1000170D
L = 1478 μH
FWD = C2M1000170D
L = 1478 μH
ETotal
EOn
EOn
EOff
EOff
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
70
Conditions:
TJ = 25 °C
tf
60
50
40
30
20
10
0
V
R
V
DD = 1200 V
L = 600 Ω
GS = -5V/+20 V
tr
td (off)
td (on)
0
10
20
30
40
50
External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
C2M1000170D Rev. E, 10-2015
7
CREE [ CREE, INC ]
