Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1700
2.0
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.6
2.1
1
4
VDS = VGS, ID = 0.5 mA
V
V
Fig. 11
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 0.5 mA, TJ = 150 °C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
1.4
μA
nA
VDS = 1.7 kV, VGS = 0 V
VGS = 20 V, VDS = 0 V
1.0
2.0
VGS = 20 V, ID = 2 A
RDS(on)
Drain-Source On-State Resistance
Transconductance
Ω
Fig. 4,5,6
Fig. 7
VGS = 20 V, ID = 2 A, TJ = 150 °C
VDS= 20 V, IDS= 2 A
0.82
0.81
200
12
gfs
S
VDS= 20 V, IDS= 2 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
EON
Input Capacitance
VGS = 0 V
Output Capacitance
pF
Fig. 17,18
VDS = 1000 V
Reverse Transfer Capacitance
Coss Stored Energy
1.3
7
f = 1 MHz
AC
V
= 25 mV
Fig 16
Fig. 26
μJ
μJ
VDS = 1.2 kV, VGS = -5/20 V
ID = 2 A, RG(ext) =ꢀ2.5ꢀΩ,ꢀ
L=ꢀ1478ꢀμH,ꢀTJ = 150 °C
Turn-On Switching Energy
40
EOFF
Turn Off Switching Energy
15
6
td(on)
tr
Turn-On Delay Time
Rise Time
VDD = 1.2 kV, VGS = -5/20 V
ID = 2 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀꢀRLꢀ=ꢀ600ꢀΩ
Timing relative to VDS
10.5
11
ns
Fig. 27
td(off)
Turn-Off Delay Time
Per IEC60747-8-4 pg 83
60
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
24.8
4.7
5.4
13
Ω
f = 1 MHz VAC = 25 mV
VDS = 1.2 kV, VGS = -5/20 V
ID = 2 A
Fig. 12
nC
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
3.8
3.3
V
V
A
VGS = - 5 V, ISD = 1 A, T = 25 °C
J
Fig. 8, 9,
10
VSD
Diode Forward Voltage
VGS = - 5 V, ISD = 1 A, T = 150 °C
J
Note 1
IS
trr
Continuous Diode Forward Current
Reverse Recovery Time
4
TC= 25 °C
20
24
ns
nC
A
VGS = - 5 V, ISD = 2 A T = 25 °C
J
VR = 1.2 kV
Note 1
Qrr
Irrm
Reverse Recovery Charge
dif/dt = 1200 A/µs
Peak Reverse Recovery Current
6.5
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
RθJC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
1.7
1.8
40
Fig. 21
°C/W
C2M1000170D Rev. E, 10-2015
2
CREE [ CREE, INC ]
