欢迎访问ic37.com |
会员登录 免费注册
发布采购

C2M1000170D_15 参数 Datasheet PDF下载

C2M1000170D_15图片预览
型号: C2M1000170D_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 1053 K
品牌: CREE [ CREE, INC ]
 浏览型号C2M1000170D_15的Datasheet PDF文件第2页浏览型号C2M1000170D_15的Datasheet PDF文件第3页浏览型号C2M1000170D_15的Datasheet PDF文件第4页浏览型号C2M1000170D_15的Datasheet PDF文件第5页浏览型号C2M1000170D_15的Datasheet PDF文件第7页浏览型号C2M1000170D_15的Datasheet PDF文件第8页浏览型号C2M1000170D_15的Datasheet PDF文件第9页浏览型号C2M1000170D_15的Datasheet PDF文件第10页  
Typical Performance  
6
80  
70  
60  
50  
40  
30  
20  
10  
0
Conditions:  
TJ ≤ 150 °C  
Conditions:  
TJ ≤ 150 °C  
5
4
3
2
1
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
Case Temperature, TC (°C)  
Case Temperature, TC (°C)  
Figure 19. Continuous Drain Current Derating vs.  
Case Temperature  
Figure 20. Maximum Power Dissipation Derating vs.  
Case Temperature  
10.00  
0.5  
0.3  
1
100E-3  
10E-3  
1E-3  
10 µs  
Limited by RDS On  
100 µs  
1 ms  
1.00  
0.10  
0.01  
0.1  
100 ms  
0.05  
0.02  
SinglePulse  
0.01  
Conditions:  
TC = 25 °C  
D = 0,  
Parameter: tp  
0.1  
1
10  
100  
1000  
1E-6  
10E-6  
100E-6  
1E-3  
Time, tp (s)  
10E-3  
100E-3  
1
Drain-Source Voltage, VDS (V)  
Figure 21. Transient Thermal Impedance  
(Junction - Case)  
Figure 22. Safe Operating Area  
120  
100  
80  
60  
40  
20  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
VDD = 1200 V  
RG(ext) = 2.5 Ω  
VGS = -5/+20 V  
V
R
V
DD = 900 V  
G(ext) = 2.5 Ω  
GS = -5/+20 V  
FWD = C2M1000170D  
L = 1478 μH  
FWD = C2M1000170D  
L = 1478 μH  
ETotal  
ETotal  
EOn  
EOn  
EOff  
EOff  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Drain to Source Current,IDS (A)  
Drain to Source Current,IDS (A)  
Figure 23. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 1200 V)  
Figure 24. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 900 V)  
C2M1000170D Rev. E, 10-2015  
6