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C2M1000170D_15 参数 Datasheet PDF下载

C2M1000170D_15图片预览
型号: C2M1000170D_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 1053 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
6
6
5
4
3
2
1
0
Conditions:  
TJ = -55 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
VGS = 20 V  
VGS = 18 V  
VGS = 20 V  
VGS = 18 V  
5
4
3
2
1
0
VGS = 16 V  
VGS = 16 V  
VGS = 14 V  
VGS = 14 V  
VGS = 12 V  
VGS = 12 V  
VGS = 10 V  
VGS = 10 V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 1. Output Characteristics TJ = -55 °C  
Figure 2. Output Characteristics TJ = 25 °C  
2.5  
6
5
4
3
2
1
0
Conditions:  
TJ = 150 °C  
tp < 200 µs  
Conditions:  
IDS = 2 A  
GS = 20 V  
tp < 200 µs  
VGS = 20 V  
VGS = 18 V  
V
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 16 V  
VGS = 14 V  
VGS = 12 V  
VGS = 10 V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
4
8
12  
16  
20  
Junction Temperature, TJ (°C)  
Drain-Source Voltage, VDS (V)  
Figure 4. Normalized On-Resistance vs. Temperature  
Figure 3. Output Characteristics TJ = 150 °C  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Conditions:  
IDS = 2 A  
tp < 200 µs  
Conditions:  
VGS = 20 V  
tp < 200 µs  
TJ = 150 °C  
VGS = 14 V  
VGS = 16 V  
VGS = 18 V  
TJ = 25 °C  
TJ = -55 °C  
VGS = 20 V  
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Drain-Source Current, IDS (A)  
Junction Temperature, TJ (°C)  
Figure 5. On-Resistance vs. Drain Current  
For Various Temperatures  
Figure 6. On-Resistance vs. Temperature  
For Various Gate Voltage  
C2M1000170D Rev. E, 10-2015  
3