欢迎访问ic37.com |
会员登录 免费注册
发布采购

C2M0080120D 参数 Datasheet PDF下载

C2M0080120D图片预览
型号: C2M0080120D
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅功率MOSFET Z- FETTM MOSFET [Silicon Carbide Power MOSFET Z-FETTM MOSFET]
分类和应用:
文件页数/大小: 9 页 / 869 K
品牌: CREE [ CREE, INC ]
 浏览型号C2M0080120D的Datasheet PDF文件第1页浏览型号C2M0080120D的Datasheet PDF文件第2页浏览型号C2M0080120D的Datasheet PDF文件第3页浏览型号C2M0080120D的Datasheet PDF文件第4页浏览型号C2M0080120D的Datasheet PDF文件第6页浏览型号C2M0080120D的Datasheet PDF文件第7页浏览型号C2M0080120D的Datasheet PDF文件第8页浏览型号C2M0080120D的Datasheet PDF文件第9页  
Typical Performance  
10000  
1000  
100  
10  
10000  
Conditions  
VGS = 0 V  
ftest = 1 MHz  
Conditions:  
VGS = 0 V  
ftest = 1 MHz  
CISS  
CISS  
1000  
100  
10  
COSS  
COSS  
CRSS  
CRSS  
1
1
0
50  
100  
Drain-Source Voltage, VDS (V)  
150  
200  
0
200  
400  
600  
800  
1000  
Drain-Source Voltage, VDS (V)  
Figure 13. Typical Typical Capacitances vs. Drain-Source  
Voltage (0 - 200V)  
Figure 14. Typical Typical Capacitances vs. Drain-Source  
Voltage (0 - 1000V)  
250  
35  
30  
25  
20  
15  
10  
5
Condition:  
TJ = 150 °C  
200  
150  
100  
50  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Case Temperature, TC (°C)  
Case Temperatrue, TC (oC)  
Figure 15. Power Dissipation Derating Curve  
Figure 16. Continuous Current Derating Curve  
1.000  
0.100  
0.010  
0.001  
100  
DC:  
Limited  
by RDS(on)  
0.5  
0.3  
10  
1
0.1  
0.05  
0.02  
0.01  
D = tp / T  
tp  
SinglePulse  
0.000001 0.00001  
T
0.1  
1
10  
100  
1000  
0.0001  
0.001  
Pulse Time, tp (s)  
0.01  
0.1  
1
Drain-Source Voltage, VDS (V)  
Figure 17. Typical Transient Thermal Impedance  
(Junction - Case) with Duty Cycle  
Figure 18. Safe Operating Area  
5
C2M0080120D Rev. A  
 复制成功!