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C2M0080120D 参数 Datasheet PDF下载

C2M0080120D图片预览
型号: C2M0080120D
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅功率MOSFET Z- FETTM MOSFET [Silicon Carbide Power MOSFET Z-FETTM MOSFET]
分类和应用:
文件页数/大小: 9 页 / 869 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
0.30  
0.25  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Parameters:  
IDS = 20 A  
Conditions:  
VDS = 10 V  
IDS = 1 mA  
-55 °C  
0.20  
Typical  
150 °C  
0.15  
0.10  
0.05  
0.00  
Minimum  
25 °C  
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Gate-SourceVoltage, VGS (V)  
Junction Temperature, TJ (°C)  
Figure 8. Typical and Minimum Threshold Voltage vs.  
Temperature  
Figure 7. On-Resistance vs. Gate Voltage  
-5  
-4  
-3  
-2  
-1  
0
-5  
-4  
-3  
-2  
-1  
0
0
0
Conditions:  
TJ = -55 °C  
Conditions:  
TJ = 25 °C  
-10  
-20  
-30  
-40  
-50  
-10  
-20  
-30  
-40  
-50  
VGS = 5 V  
VGS = 0 V  
V
GS = 10 V  
VGS = 15 V  
GS = 20 V  
VGS = 5 V  
VGS = 0 V  
V
VGS = 10 V  
GS = 15 V  
VGS = 20 V  
V
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 9. Typical 3rd Quadrant Characteristics  
TJ = -55 ºC  
Figure 10. Typical 3rd Quadrant Characteristics  
TJ = 25 ºC  
-5  
-4  
-3  
-2  
-1  
0
60  
0
Conditions:  
TJ = 150 °C  
VGS = 0 V  
VGS = 5 V  
50  
40  
30  
20  
10  
0
-10  
-20  
-30  
-40  
-50  
V
V
GS = 10 V  
GS = 15 V  
GS = 20 V  
V
0
200  
400  
600  
800  
1000  
1200  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 11. Typical 3rd Quadrant Characteristics  
TJ = 150 ºC  
Figure 12. Typical transfer Characteristics  
4
C2M0080120D Rev. A  
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